part number NE72218 package outline 18 symbols parameters and conditions units min typ max gs power gain at v ds = 3 v, i d = 30 ma, f = 12 ghz db 5.0 p 1db output power at 1 db gain compression point at v ds = 3 v, i d = 30 ma, f = 12 ghz dbm 15.0 pn phase noise at v ds = 3 v, i d = 30 ma, f = 11 ghz, 100 khz offset dbc/hz -110 phase noise at v ds = 3 v, i d = 30 ma, f = 11 ghz, 10 khz offset dbc/hz -90 g m transconductance at v ds = 3 v, i d = 30 ma ms 20 45 i dss saturated drain current at v ds = 3 v, v gs = 0 v ma 30 60 120 v gs (off) gate to source cut off voltage at v ds = 3 v, i d = 100 a v -0.5 -2.0 -4.0 i gso gate to source leakage current at v gs = -5 v a 1.0 10 NE72218 c to x band n-channel gaas mesfet high power gain: gs = 5.0 db typ at f = 12 ghz low phase noise: -110 dbc/hz typ at 100 khz offset at f = 11 ghz gate length: l g = 0.8 m (recessed gate) gate width: w g = 400 m 4 pin super mini mold: (sot-343) tape & reel packaging features package dimensions (units in mm) package outline 18 electrical characteristics (t a = 25 c) pin connections 1. source 2. gate 3. source 4. drain california eastern laboratories description the NE72218 is a low cost gaas mesfet suitable for both amplifier and oscillator applications through x-band. the device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for im- proved rf and dc performance, reliability and uniformity. the NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design. nec's stringent quality assurance and test procedures ensure the highest reliability performance. 2.1 0.2 1.25 0.1 1 2 3 0.3 0.3 0.9 0.1 0 to 0.1 0.15 +0.10 -0.05 2.0 0.2 4 0.4 +0.10 -0.05 1.3 +0.10 -0.05 0.65 0.65 0.60 0.65 1.25 v57
NE72218 absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v ds drain to source voltage v 5.0 v gs gate to source voltage v -5.0 v gd gate to drain voltage v -5.0 i d drain current i dss ma t ch channel temperature c 125 t stg storage temperature c -65 to +125 p t total power dissipation mw 250 notes: 1. operation in excess of any one of these parameters may result in permanent damage. typical performance curves (t a = 25 c) ambient temperature, t a ( c) drain to source voltage, v ds (v) drain current, i d (ma) gate to source voltage, v gs (v) drain current, i d (ma) total power dissipation, p t (mw) total power dissipation vs. ambient temperature drain current vs. drain to source voltage drain current vs. gate to source voltage ordering information rank i dss (ma) marking 57 30 to 120 v57 58 65 to 120 v58 59 30 to 75 v59 i dss classification part quantity package number style NE72218 bulk NE72218-t1 3 kpcs/reel 8-mm wide embossed tape, pin 3 (source), pin 4 (drain) face perforated side of tape. 8-mm wide embossed tape, pin 1 (source), pin 2 (gate) face perforated side of tape. 100 80 60 40 20 01 2 3 4 5 v gs = 0 v v gs = -0.5 v v gs = -1.0 v 20 0 -4.0 -2.0 0 40 60 80 v ds = 3 v 300 200 100 0 50 100 150 offset frequency, khz base band 1/f noise, dbv/hz base band 1/f noise vs. offset frequency -90 -100 -110 -130 -140 -150 -160 -80 -120 0.1 1 10 100 v ds = 3 v, i ds = 30 ma
parameters q1 parameters q1 vto -1.34 rg 10 vtosc 0 rd 4 alpha 2.5 rs 4 beta 0.04 rgmet 0 gamma 0.07 kf 2e-10 gammadc 0.03 af 1.5 q 2 tnom 27 delta 0.3 xti 3 vbi 1 eg 1.43 is 1e-14 vtotc 0 n 1.3 betatce 0 ris 0 ffe 1 rid 0 tau 4e-12 cds 0.27e-12 rdb 5000 cbs 1e-10 cgso 0.85e-12 cgdo 0.055e-12 delta1 0.3 delta2 0.3 fc 0.5 vbr infinity parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps fet nonlinear model parameters (1) units model range frequency: 0.5 to 18 ghz bias: v ds = 2 v to 4 v, i d = 10 ma to 40 ma i dss = 55 ma @ v gs = 0, v ds = 3 v power: v ds = 3 v, i d = 30 ma, 4 ghz date: 4/98 (1) series iv libra tom model NE72218 NE72218 nonlinear model schematic cgd_pkg lg_pkg 0.003pf ld ld_pkg cds_pkg ls_pkg cgs_pkg 0.12pf cgx 0.15pf 0.48nh 0.55nh gate ls q1 lg 0.22nh source drain 0.1nh 0.15pf cdx 0.02pf 0.05nh 0.82nh
NE72218 NE72218 (rank 58) nonlinear model schematic cgd_pkg lg_pkg 0.003pf ld ld_pkg cds_pkg ls_pkg cgs_pkg 0.12pf cgx 0.15pf 0.48nh 0.55nh gate ls q1 lg 0.22nh source drain 0.1nh 0.15pf cdx 0.02pf 0.05nh 0.82nh parameters q1 parameters q1 vto -1.8065 rg 10 vtosc 0 rd 4 alpha 2.5 rs 4 beta 0.0396 rgmet 0 gamma 0.072 kf 2e-10 gammadc 0.03 af 1.5 q 1.8 tnom 27 delta 0.3 xti 3 vbi 1 eg 1.43 is 1e-14 vtotc 0 n 1.3 betatce 0 ris 0 ffe 1 rid 0 tau 4e-12 cds 0.27e-12 rdb 5000 cbs 1e-10 cgso 0.85e-12 cgdo 0.055e-12 delta1 0.3 delta2 0.3 fc 0.5 vbr infinity fet nonlinear model parameters (1) (1) series iv libra tom model parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps units model range frequency: 0.5 to 18 ghz bias: v ds = 2 v to 4 v, i d = 10 ma to 40 ma i dss = 82 ma @ v gs = 0, v ds = 3 v date: 4/98
NE72218 NE72218 (rank 59) nonlinear model schematic cgd_pkg lg_pkg 0.003pf ld ld_pkg cds_pkg ls_pkg cgs_pkg 0.12pf cgx 0.15pf 0.48nh 0.55nh gate ls q1 lg 0.22nh source drain 0.1nh 0.15pf cdx 0.02pf 0.05nh 0.82nh parameters q1 parameters q1 vto -1.34 rg 10 vtosc 0 rd 4 alpha 2.5 rs 4 beta 0.04 rgmet 0 gamma 0.07 kf 2e-10 gammadc 0.03 af 1.5 q 2 tnom 27 delta 0.3 xti 3 vbi 1 eg 1.43 is 1e-14 vtotc 0 n 1.3 betatce 0 ris 0 ffe 1 rid 0 tau 4e-12 cds 0.27e-12 rdb 5000 cbs 1e-10 cgso 0.85e-12 cgdo 0.055e-12 delta1 0.3 delta2 0.3 fc 0.5 vbr infinity fet nonlinear model parameters (1) (1) series iv libra tom model parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps units model range frequency: 0.5 to 18 ghz bias: v ds = 2 v to 4 v, i d = 10 ma to 40 ma i dss = 55 ma @ v gs = 0, v ds = 3 v power: v ds = 3 v, i d = 30 ma, 4 ghz date: 4/98 exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com 1/99 data subject to change without notice
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